
Sawing Temperature in SiC Wafer Cutting: A Diamond Wire Saw Control Guide
Temperature is easy to treat as a secondary variable in SiC wafer cutting. A machine may report stable wire speed, the coolant tank may remain
Precision Cutting for New Energy Battery Materials
Advanced new energy batteries rely on precision processing of electrode, separator, and solid-state battery materials. Diamond wire cutting is the ideal solution for slicing hard, brittle, and high-value battery materials, delivering ultra-low kerf loss, damage-free surfaces, and tight dimensional accuracy.
Our cutting systems support customized processing for lithium-ion, solid-state, and next-gen energy storage materials, enabling high-precision slicing for R&D prototyping and mass production, while maximizing material utilization and production efficiency.
Our precision cutting systems are designed for the complex processing needs of new energy battery materials, supporting lithium-ion, solid-state, and next-generation energy storage technologies. They deliver damage-free, high-precision slicing for hard, brittle, and high-value battery materials, including electrode foils, ceramic separators, and solid-state electrolyte components. With customizable cutting paths and tension control, they meet the diverse R&D and mass production requirements of battery manufacturers.
| NO. | Parameter | Specification |
| 1 | Model | TCQF400LNC-FM-HL |
| 2 | Cutting Principle | Endless diamond wire / Physical cutting |
| 3 | Cutting Functions | Slicing / Angle & Profile Cutting |
| 4 | Maximum Workpiece Size(mm) | Φ600mm, Height 500mm |
| 5 | Worktable Size(mm) | Ø380 转台 |
| 6 | Cutting Planarity Accuracy(mm) | 0.08 |
| 7 | Surface Roughness(μm) | Ra 0.8μm |
| 8 | Wire Specification(mm) | Ø0.65–1.0/2580 |
| 9 | Tension System | Constant Wire Tension Control |
| 10 | Guide Wheel Quantity | 4 wheels |
| 11 | Drive Motor | Servo motor |
| 12 | Wire Speed (m/s) | 51Max(Adjustable) |
| 13 | Total Power(kW) | 2.8 |
| 14 | Voltage | 220v 50Hz |
| 15 | Control System | Custom-developed Tongcheng T32 system |
| 16 | Footprint (L×W×H)(mm) | 1350×1066×1968 |
| 17 | Gross Weight kg | 720 |

Temperature is easy to treat as a secondary variable in SiC wafer cutting. A machine may report stable wire speed, the coolant tank may remain

A diamond wire can continue moving long after it has stopped cutting economically. It may not be broken, alarms may remain clear, and the machine

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