
Sawing Temperature in SiC Wafer Cutting: A Diamond Wire Saw Control Guide
Temperature is easy to treat as a secondary variable in SiC wafer cutting. A machine may report stable wire speed, the coolant tank may remain
Precision Diamond Wire Cutting for Solar Wafer Production
High-efficiency N-type and P-type solar wafers are the core of next-generation photovoltaic modules. Precision diamond wire cutting is critical to producing ultra-thin, high-quality wafers that maximize cell conversion efficiency and material yield. This process has replaced traditional sawing, delivering lower kerf loss, higher throughput, and superior surface quality for mass PV manufacturing.
Our diamond wire systems ensure consistent wafer thickness, minimal breakage, and controlled surface damage, enabling high-throughput production of ultra-thin wafers while meeting the strict quality requirements of modern solar cell technologies.
Our diamond wire cutting solutions are tailored for high-efficiency PV wafer production, delivering ultra-thin, high-quality wafers that directly boost solar cell conversion efficiency. The systems feature advanced wire path optimization and real-time monitoring, ensuring consistent thickness, flatness, and surface quality for N-type TOPCon, HJT, and other next-generation solar cells. With low-damage cutting technology, they minimize wafer warpage and micro-cracks, significantly improving cell yield and module performance.
| NO. | Parameter | Specification |
| 1 | Model | TCQF15030CNC |
| 2 | Cutting Principle | Endless diamond wire / Physical cutting |
| 3 | Cutting Functions | Slicing / 2D Contour Cutting |
| 4 | Maximum Workpiece Size(mm) | 1200 × 1000 × 1000 mm(L×W×H) |
| 5 | Worktable Size(mm) | 1500×300 |
| 6 | Cutting Planarity Accuracy(mm) | 0.1 |
| 7 | Surface Roughness(μm) | Ra 0.8 μm |
| 8 | Wire Specification(mm) | Ø0.65–1.0/6250 |
| 9 | Tension System | Constant Wire Tension Control |
| 10 | Guide Wheel Quantity | 4 wheels |
| 11 | Drive Motor | Servo motor |
| 12 | Wire Speed (m/s) | 51Max(Adjustable) |
| 13 | Total Power | 3.6 |
| 14 | Voltage | 220v 50Hz |
| 15 | Control System | Custom-developed Tongcheng T33 system |
| 16 | Footprint (L×W×H)(mm) | 3200×1500×1500 |
| 17 | Gross Weight kg | 3200 |

Temperature is easy to treat as a secondary variable in SiC wafer cutting. A machine may report stable wire speed, the coolant tank may remain

A diamond wire can continue moving long after it has stopped cutting economically. It may not be broken, alarms may remain clear, and the machine

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