
Sawing Temperature in SiC Wafer Cutting: A Diamond Wire Saw Control Guide
Temperature is easy to treat as a secondary variable in SiC wafer cutting. A machine may report stable wire speed, the coolant tank may remain
Ultra-Accurate Diamond Wire Systems for Advanced Substrates
High-value base materials such as optical glass, quartz, sapphire, and semiconductor substrates are essential components in precision optical, RF, and optoelectronic devices. Ultra-precise cutting is required to achieve tight tolerances, superior surface quality, and minimal material loss in these high-value applications.
Our high-precision cutting systems deliver industry-leading accuracy, ensuring clean, burr-free cuts with exceptional dimensional consistency. The advanced cooling and tension control systems protect delicate substrates, maintaining their optical, electrical, and mechanical properties for critical applications.
Designed to support both R&D prototyping and large-scale manufacturing, our systems offer scalable performance and versatile material compatibility. The intelligent control interface allows for easy parameter adjustment, ensuring optimal performance across a wide range of advanced base materials and processing requirements.
Our high-precision base material cutting systems deliver industry-leading accuracy for a full range of advanced base materials, including optical glass, quartz, sapphire, and semiconductor substrates. Designed for R&D prototyping and high-volume mass production, these systems achieve tight-tolerance slicing with superior surface quality, eliminating the need for extensive post-processing. The intelligent cutting algorithms and constant temperature control ensure consistent performance across diverse material types and thicknesses.
| NO. | Parameter | Specification |
| 1 | Model | TCQF400LNC-FM-HL |
| 2 | Cutting Principle | Endless diamond wire / Physical cutting |
| 3 | Cutting Functions | Slicing / Angle & Profile Cutting |
| 4 | Maximum Workpiece Size(mm) | Φ600mm, Height 500mm |
| 5 | Worktable Size(mm) | Ø380 转台 |
| 6 | Cutting Planarity Accuracy(mm) | 0.08 |
| 7 | Surface Roughness(μm) | Ra 0.8μm |
| 8 | Wire Specification(mm) | Ø0.65–1.0/2580 |
| 9 | Tension System | Constant Wire Tension Control |
| 10 | Guide Wheel Quantity | 4 wheels |
| 11 | Drive Motor | Servo motor |
| 12 | Wire Speed (m/s) | 51Max(Adjustable) |
| 13 | Total Power(kW) | 2.8 |
| 14 | Voltage | 220v 50Hz |
| 15 | Control System | Custom-developed Tongcheng T32 system |
| 16 | Footprint (L×W×H)(mm) | 1350×1066×1968 |
| 17 | Gross Weight kg | 720 |

Temperature is easy to treat as a secondary variable in SiC wafer cutting. A machine may report stable wire speed, the coolant tank may remain

A diamond wire can continue moving long after it has stopped cutting economically. It may not be broken, alarms may remain clear, and the machine

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