
Sawing Temperature in SiC Wafer Cutting: A Diamond Wire Saw Control Guide
Temperature is easy to treat as a secondary variable in SiC wafer cutting. A machine may report stable wire speed, the coolant tank may remain
Custom Cutting Systems for Graphite & Carbon Material Processing
Graphite and carbon materials are essential for semiconductor, EDM, and new energy industries, valued for high temperature resistance and conductivity. Precision custom cutting shapes these materials into complex components, directly impacting accuracy and efficiency. Diamond wire cutting has become the optimal solution, delivering lower kerf loss, cleaner cuts, and greater flexibility than traditional methods.
In production lines, diamond wire systems perform multi-axis programmable cutting, completing one-time forming of complex profiles with smooth edges and minimal dust. Stable tension control and optimized cooling prevent chipping and deformation, critical for high-purity carbon components.
Our systems maximize material yield with ultra-low kerf loss, ensure clean, low-dust operation, and maintain stable performance in continuous production, supporting large-format workpieces and custom shapes.
Our diamond wire cutting systems provide high-precision, custom profile cutting for graphite electrodes, carbon composites, carbon fiber reinforced materials, and high-purity carbon components. Designed for clean, low-dust processing, the machines ensure minimal material loss and tight dimensional control, even for complex shapes and large-format workpieces. With stable wire tension and intelligent path planning, we deliver consistent cutting quality for semiconductor, EDM, metallurgy, and new energy applications.
| NO. | Parameter | Specification |
| 1 | Model | TCQF15030CNC |
| 2 | Cutting Principle | Endless diamond wire / Physical cutting |
| 3 | Cutting Functions | Slicing / 2D Contour Cutting |
| 4 | Maximum Workpiece Size(mm) | 1200 × 1000 × 1000 mm(L×W×H) |
| 5 | Worktable Size(mm) | 1500×300 |
| 6 | Cutting Planarity Accuracy(mm) | 0.1 |
| 7 | Surface Roughness(μm) | Ra 0.8 μm |
| 8 | Wire Specification(mm) | Ø0.65–1.0/6250 |
| 9 | Tension System | Constant Wire Tension Control |
| 10 | Guide Wheel Quantity | 4 wheels |
| 11 | Drive Motor | Servo motor |
| 12 | Wire Speed (m/s) | 51Max(Adjustable) |
| 13 | Total Power(kW) | 3.6 |
| 14 | Voltage | 220v 50Hz |
| 15 | Control System | Custom-developed Tongcheng T33 system |
| 16 | Footprint (L×W×H)(mm) | 3200×1500×1500 |
| 17 | Gross Weight kg | 3200 |

Temperature is easy to treat as a secondary variable in SiC wafer cutting. A machine may report stable wire speed, the coolant tank may remain

A diamond wire can continue moving long after it has stopped cutting economically. It may not be broken, alarms may remain clear, and the machine

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