
Sawing Temperature in SiC Wafer Cutting: A Diamond Wire Saw Control Guide
Temperature is easy to treat as a secondary variable in SiC wafer cutting. A machine may report stable wire speed, the coolant tank may remain
Custom Cutting Systems for Graphite & Carbon Material Processing
Graphite and carbon materials are essential for semiconductor, EDM, and new energy industries, valued for high temperature resistance and conductivity. Precision custom cutting shapes these materials into complex components, directly impacting accuracy and efficiency. Diamond wire cutting has become the optimal solution, delivering lower kerf loss, cleaner cuts, and greater flexibility than traditional methods.
In production lines, diamond wire systems perform multi-axis programmable cutting, completing one-time forming of complex profiles with smooth edges and minimal dust. Stable tension control and optimized cooling prevent chipping and deformation, critical for high-purity carbon components.
Our systems maximize material yield with ultra-low kerf loss, ensure clean, low-dust operation, and maintain stable performance in continuous production, supporting large-format workpieces and custom shapes.
Our diamond wire cutting systems provide high-precision, custom profile cutting for graphite electrodes, carbon composites, carbon fiber reinforced materials, and high-purity carbon components. Designed for clean, low-dust processing, the machines ensure minimal material loss and tight dimensional control, even for complex shapes and large-format workpieces. With stable wire tension and intelligent path planning, we deliver consistent cutting quality for semiconductor, EDM, metallurgy, and new energy applications.
| HAYIR. | Parametre | Teknik Özellikler |
| 1 | Model | TCQF15030CNC |
| 2 | Kesme Prensibi | Sonsuz elmas tel / Fiziksel kesim |
| 3 | Kesme İşlevleri | Slicing / 2D Contour Cutting |
| 4 | Maksimum İş Parçası Boyutu (mm) | 1200 × 1000 × 1000 mm(L×W×H) |
| 5 | Çalışma Masası Boyutu (mm) | 1500×300 |
| 6 | Kesim Düzlük Hassasiyeti (mm) | 0.1 |
| 7 | Yüzey Pürüzlülüğü (μm) | Ra 0,8 μm |
| 8 | Tel Özellikleri (mm) | Ø0.65–1.0/6250 |
| 9 | Gergi Sistemi | Sabit Tel Gerginliği Kontrolü |
| 10 | Yönlendirme Tekerleği Adedi | 4 tekerlek |
| 11 | Tahrik Motoru | Servo motor |
| 12 | Tel Hızı (m/s) | 51Max (Ayarlanabilir) |
| 13 | Toplam Güç (kW) | 3.6 |
| 14 | Gerilim | 220 V 50 Hz |
| 15 | Kontrol Sistemi | Custom-developed Tongcheng T33 system |
| 16 | Kapladığı alan (U×G×Y) (mm) | 3200×1500×1500 |
| 17 | Brüt Ağırlık (kg) | 3200 |

Temperature is easy to treat as a secondary variable in SiC wafer cutting. A machine may report stable wire speed, the coolant tank may remain

A diamond wire can continue moving long after it has stopped cutting economically. It may not be broken, alarms may remain clear, and the machine

Build a SiC wafer metrology control plan after diamond wire saw cutting, covering TTV, flatness, bow, warp, edge chips and subsurface damage.

See how 800 VDC AI data center power architectures change SiC wafer cutting, kerf control, surface damage limits and supplier qualification.

Build a practical SiC slicing cost model using kerf loss, yield, wire life, cycle time, finishing allowance and diamond wire saw data.

Learn how 200 mm SiC wafer slicing changes contact length, wire bow, coolant delivery, TTV control and diamond wire saw qualification.
ewirexon.com
Genellikle birkaç dakika içinde yanıt verir
Merhaba, sizin için yapabileceğim bir şey var mı?
WhatsApp'tan bize mesaj gönderin
🟢Çevrimiçi | Gizlilik politikası
WhatsApp üzerinden bize mesaj gönderin