Low-Stress Cutting Systems for Hard & Brittle Electronic Materials
Brittle electronic plates, including ceramic substrates, semiconductor wafers, and glass-ceramic components, present unique machining challenges due to their high hardness and low fracture toughness. Precision machining is required to achieve tight dimensional tolerances while avoiding surface damage and cracking.
Our diamond wire cutting systems excel at ultra-precise machining of hard brittle materials, achieving micron-level accuracy and minimal surface damage. The advanced cutting technology controls subsurface damage effectively, making it ideal for microelectronic components, power devices, and sensor manufacturing.
Engineered for the most demanding semiconductor and electronics applications, our systems feature high-rigidity frames and intelligent process control. They deliver stable, repeatable performance for R&D prototypes and high-volume production lines alike, meeting the strict quality standards of the 5G, aerospace, and medical electronics industries.
Elmas tel kesme sistemlerimiz, seramik alt tabakalar, yarı iletken yonga plakaları ve cam-seramik bileşenler dahil olmak üzere sert ve kırılgan elektronik plakaların karmaşık işlenmesi için tasarlanmıştır. Gelişmiş kesme teknolojisi, yüzey hasarını en aza indirerek ultra ince dilimleme sağlar ve bu da sistemi mikroelektronik bileşenler, güç cihazları ve sensör üretimi için ideal hale getirir. Özelleştirilebilir kesme yolları ve yüksek rijitlikli makine şasileri sayesinde, en zorlu kırılgan malzemelerde bile tutarlı bir hassasiyet sunar.
| HAYIR. | Parametre | Teknik Özellikler |
| 1 | Model | TCQF400LNC-FM-HL |
| 2 | Kesme Prensibi | Sonsuz elmas tel / Fiziksel kesim |
| 3 | Kesme İşlevleri | Dilimleme / Açı ve Profil Kesimi |
| 4 | Maksimum İş Parçası Boyutu (mm) | Φ600 mm, Yükseklik 500 mm |
| 5 | Çalışma Masası Boyutu (mm) | Ø380 转台 |
| 6 | Kesim Düzlük Hassasiyeti (mm) | 0.08 |
| 7 | Yüzey Pürüzlülüğü (μm) | Ra 0,8 μm |
| 8 | Tel Özellikleri (mm) | Ø0,65–1,0/2580 |
| 9 | Gergi Sistemi | Sabit Tel Gerginliği Kontrolü |
| 10 | Yönlendirme Tekerleği Adedi | 4 tekerlek |
| 11 | Tahrik Motoru | Servo motor |
| 12 | Tel Hızı (m/s) | 51Max (Ayarlanabilir) |
| 13 | Toplam Güç (kW) | 2.8 |
| 14 | Gerilim | 220 V 50 Hz |
| 15 | Kontrol Sistemi | Özel olarak geliştirilmiş Tongcheng T32 sistemi |
| 16 | Kapladığı alan (U×G×Y) (mm) | 1350×1066×1968 |
| 17 | Brüt Ağırlık (kg) | 720 |
Temperature is easy to treat as a secondary variable in SiC wafer cutting. A machine may report stable wire speed, the coolant tank may remain
A diamond wire can continue moving long after it has stopped cutting economically. It may not be broken, alarms may remain clear, and the machine
Build a SiC wafer metrology control plan after diamond wire saw cutting, covering TTV, flatness, bow, warp, edge chips and subsurface damage.
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Build a practical SiC slicing cost model using kerf loss, yield, wire life, cycle time, finishing allowance and diamond wire saw data.
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