
Sawing Temperature in SiC Wafer Cutting: A Diamond Wire Saw Control Guide
Temperature is easy to treat as a secondary variable in SiC wafer cutting. A machine may report stable wire speed, the coolant tank may remain
High-Precision Cutting Systems for Sapphire Wafer & Substrate Manufacturing
To maintain the quality and performance of optical and electronic components such as LED chips, photonic devices, and RF modules, and to reduce production yield loss, sapphire substrate fine cutting and precision processing equipment is used.
To maximize production throughput in high-volume manufacturing and keep operating costs as low as possible, cutting equipment should be designed to be highly precise and efficient. Optimal matching of the diamond wire, tension control system and cutting machine is a prerequisite for low-stress and high-yield sapphire processing. A highly efficient cutting system can make a decisive contribution to reducing processing time by providing ultra-narrow kerf loss at high process stability. Depending on the wafer thickness and material properties of the sapphire, the required cutting precision of a substrate processing line varies, and with it the wire tension control and cutting speed to be delivered by the diamond wire saw.
In addition to a high precision in the operating range of the production line, the cutting system used should be as space-saving as possible and have a robust design in order to keep the installation and maintenance effort low. The latter applies in particular to automated processing lines used in high-volume fabs. If the cutting system is used in cleanroom environments, the high reliability and low contamination requirements of the diamond wire cutting equipment used must also be taken into account.
The Sapphire Substrate Cutting Systems are a series specially developed for ultra-precision sapphire wafer slicing and fine cutting. The maximum shaft power of the cutting system is matched to the rated motor power and speed of common standard production lines. Thanks to an efficient diamond wire-guide combination, a very high cutting performance is achieved. The design of the Sapphire Cutting System with optimized wire path geometry enables ultra-narrow kerf loss and low-stress processing.
enabled by special high-precision wire tension control that provides consistent cutting accuracy.
without additional contamination risks, as optimized system design ensures minimal particle generation.
thanks to cutting system engineered for optimum material yield and maximum utilization of sapphire blanks.
as robust high-rigidity frame design generates less mechanical wear and requires less frequent maintenance.
| NO. | Parameter | Specification |
| 1 | Model | TCQF400LNC-FM-HL |
| 2 | Cutting Principle | Endless diamond wire / Physical cutting |
| 3 | Cutting Functions | Slicing / Angle & Profile Cutting |
| 4 | Maximum Workpiece Size(mm) | Φ600mm, Height 500mm |
| 5 | Worktable Size(mm) | Ø380 转台 |
| 6 | Cutting Planarity Accuracy(mm) | 0.08 |
| 7 | Surface Roughness(μm) | Ra 0.8μm |
| 8 | Wire Specification(mm) | Ø0.65–1.0/2580 |
| 9 | Tension System | Constant Wire Tension Control |
| 10 | Guide Wheel Quantity | 4 wheels |
| 11 | Drive Motor | Servo motor |
| 12 | Wire Speed (m/s) | 51Max(Adjustable) |
| 13 | Total Power | 2.8 |
| 14 | Voltage | 220v 50Hz |
| 15 | Control System | Custom-developed Tongcheng T32 system |
| 16 | Footprint (L×W×H)(mm) | 1350×1066×1968 |
| 17 | Gross Weight kg | 720 |

Temperature is easy to treat as a secondary variable in SiC wafer cutting. A machine may report stable wire speed, the coolant tank may remain

A diamond wire can continue moving long after it has stopped cutting economically. It may not be broken, alarms may remain clear, and the machine

Build a SiC wafer metrology control plan after diamond wire saw cutting, covering TTV, flatness, bow, warp, edge chips and subsurface damage.

See how 800 VDC AI data center power architectures change SiC wafer cutting, kerf control, surface damage limits and supplier qualification.

Build a practical SiC slicing cost model using kerf loss, yield, wire life, cycle time, finishing allowance and diamond wire saw data.

Learn how 200 mm SiC wafer slicing changes contact length, wire bow, coolant delivery, TTV control and diamond wire saw qualification.
ewirexon.com
Typically replies within minutes
Hi, there, is there anything do for you ?
WhatsApp Us
🟢Online | Privacy policy
WhatsApp us