Ultra-Accurate Diamond Wire Systems for Advanced Substrates
High-value base materials such as optical glass, quartz, sapphire, and semiconductor substrates are essential components in precision optical, RF, and optoelectronic devices. Ultra-precise cutting is required to achieve tight tolerances, superior surface quality, and minimal material loss in these high-value applications.
Our high-precision cutting systems deliver industry-leading accuracy, ensuring clean, burr-free cuts with exceptional dimensional consistency. The advanced cooling and tension control systems protect delicate substrates, maintaining their optical, electrical, and mechanical properties for critical applications.
Designed to support both R&D prototyping and large-scale manufacturing, our systems offer scalable performance and versatile material compatibility. The intelligent control interface allows for easy parameter adjustment, ensuring optimal performance across a wide range of advanced base materials and processing requirements.
Our high-precision base material cutting systems deliver industry-leading accuracy for a full range of advanced base materials, including optical glass, quartz, sapphire, and semiconductor substrates. Designed for R&D prototyping and high-volume mass production, these systems achieve tight-tolerance slicing with superior surface quality, eliminating the need for extensive post-processing. The intelligent cutting algorithms and constant temperature control ensure consistent performance across diverse material types and thicknesses.
| 아니요. | 매개변수 | 사양 |
| 1 | 모델 | TCQF400LNC-FM-HL |
| 2 | 절단 원리 | 무한 다이아몬드 와이어 / 물리적 절단 |
| 3 | 절단 기능 | 슬라이싱 / 각도 및 단면 절단 |
| 4 | 최대 공작물 크기(mm) | Φ600mm, 높이 500mm |
| 5 | 작업대 크기(mm) | Ø380 转台 |
| 6 | 절단 평탄도 정밀도(mm) | 0.08 |
| 7 | 표면 거칠기(μm) | Ra 0.8μm |
| 8 | 와이어 사양(mm) | Ø0.65–1.0/2580 |
| 9 | 장력 시스템 | 일정한 와이어 장력 제어 |
| 10 | 가이드 휠 수량 | 4륜 |
| 11 | 구동 모터 | 서보 모터 |
| 12 | 와이어 속도 (m/s) | 51Max（조절 가능） |
| 13 | 총 출력(kW) | 2.8 |
| 14 | 전압 | 220V 50Hz |
| 15 | 제어 시스템 | 맞춤 개발된 통청 T32 시스템 |
| 16 | 치수 (길이×폭×높이)(mm) | 1350×1066×1968 |
| 17 | 총 중량 (kg) | 720 |
Temperature is easy to treat as a secondary variable in SiC wafer cutting. A machine may report stable wire speed, the coolant tank may remain
A diamond wire can continue moving long after it has stopped cutting economically. It may not be broken, alarms may remain clear, and the machine
Build a SiC wafer metrology control plan after diamond wire saw cutting, covering TTV, flatness, bow, warp, edge chips and subsurface damage.
See how 800 VDC AI data center power architectures change SiC wafer cutting, kerf control, surface damage limits and supplier qualification.
Build a practical SiC slicing cost model using kerf loss, yield, wire life, cycle time, finishing allowance and diamond wire saw data.
Learn how 200 mm SiC wafer slicing changes contact length, wire bow, coolant delivery, TTV control and diamond wire saw qualification.
