
Sawing Temperature in SiC Wafer Cutting: A Diamond Wire Saw Control Guide
Temperature is easy to treat as a secondary variable in SiC wafer cutting. A machine may report stable wire speed, the coolant tank may remain
Advanced Processing Systems for New-type Functional Material Manufacturing
New-type functional materials (composites, 2D materials, energy storage materials) drive cutting-edge industries like new energy and semiconductors. Precision processing unlocks their unique properties, directly determining device performance. Diamond wire cutting is the key technology, offering ultra-low damage and wide compatibility.
In R&D and production, diamond wire systems perform ultra-fine slicing, ensuring minimal subsurface damage and micron-level accuracy. Flexible configurations support both lab prototyping and mass production, adapting to evolving material needs.
Our systems deliver ultra-low damage cutting to protect material performance, high precision for micro-components, and wide material compatibility, supporting next-generation new energy and semiconductor technologies.
Our diamond wire cutting systems support high-efficiency, high-precision processing of a wide range of new-type functional materials, including composite materials, biomaterials, 2D materials, energy storage materials, and special structural materials. With ultra-fine cutting capability and low-damage processing characteristics, they meet the strict requirements of R&D prototypes and small-batch trial production as well as large-scale mass production.
| 아니요. | 매개변수 | 사양 |
| 1 | 모델 | (사용자 정의 가능, 예: EW-200) |
| 2 | 절단 원리 | 다이아몬드 와이어를 이용한 기계식 냉간 절단 |
| 3 | 절단 기능 | 썰기 |
| 4 | 공작물 최대 치수 (길이×폭×높이) | 150 × 150 × 150 mm |
| 5 | 작업대 크기 (길이×너비) | 160 × 160 mm |
| 6 | 절단 평탄도 정밀도 | ≤ 0.1 mm |
| 7 | 표면 거칠기 | Ra 0.8 μm |
| 8 | 다이아몬드 와이어 사양 | Φ0.5 × 1797 mm (직경 범위: 0.35~0.8 mm) |
| 9 | 장력 시스템 | 서보 장력 제어 |
| 10 | 가이드 휠 수량 | 3륜 |
| 11 | 구동 모터 | 맞춤형 서보 모터 |
| 12 | 스핀들 회전 속도 | 4500 rpm |
| 13 | 주 모터 출력 | 1.1 kW |
| 14 | 총 전력 소비량 | 1.5 kW |
| 15 | 전원 공급 장치 | 220 V / 50 Hz |
| 16 | 제어 시스템 | 자체 개발한 통청 T30 |
| 17 | 치수 (길이×폭×높이) | 약 850 × 800 × 950 mm |
| 18 | 총중량 | 약 560kg |

Temperature is easy to treat as a secondary variable in SiC wafer cutting. A machine may report stable wire speed, the coolant tank may remain

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