
Sawing Temperature in SiC Wafer Cutting: A Diamond Wire Saw Control Guide
Temperature is easy to treat as a secondary variable in SiC wafer cutting. A machine may report stable wire speed, the coolant tank may remain
Precision Diamond Wire Cutting for Solar Wafer Production
High-efficiency N-type and P-type solar wafers are the core of next-generation photovoltaic modules. Precision diamond wire cutting is critical to producing ultra-thin, high-quality wafers that maximize cell conversion efficiency and material yield. This process has replaced traditional sawing, delivering lower kerf loss, higher throughput, and superior surface quality for mass PV manufacturing.
Our diamond wire systems ensure consistent wafer thickness, minimal breakage, and controlled surface damage, enabling high-throughput production of ultra-thin wafers while meeting the strict quality requirements of modern solar cell technologies.
Our diamond wire cutting solutions are tailored for high-efficiency PV wafer production, delivering ultra-thin, high-quality wafers that directly boost solar cell conversion efficiency. The systems feature advanced wire path optimization and real-time monitoring, ensuring consistent thickness, flatness, and surface quality for N-type TOPCon, HJT, and other next-generation solar cells. With low-damage cutting technology, they minimize wafer warpage and micro-cracks, significantly improving cell yield and module performance.
| SỐ. | Tham số | Thông số kỹ thuật |
| 1 | Mẫu | TCQF15030CNC |
| 2 | Nguyên lý cắt | Dây kim cương vô tận / Cắt cơ học |
| 3 | Các chức năng cắt | Slicing / 2D Contour Cutting |
| 4 | Kích thước tối đa của phôi (mm) | 1200 × 1000 × 1000 mm(L×W×H) |
| 5 | Kích thước bàn làm việc (mm) | 1500×300 |
| 6 | Độ chính xác về độ phẳng khi cắt (mm) | 0.1 |
| 7 | Độ nhám bề mặt (μm) | Ra 0,8 μm |
| 8 | Thông số kỹ thuật dây (mm) | Ø0.65–1.0/6250 |
| 9 | Hệ thống căng dây | Kiểm soát độ căng dây không đổi |
| 10 | Số lượng bánh dẫn hướng | 4 bánh xe |
| 11 | Động cơ truyền động | Động cơ servo |
| 12 | Tốc độ dây (m/s) | 51Max (Có thể điều chỉnh) |
| 13 | Total Power | 3.6 |
| 14 | Điện áp | 220 V, 50 Hz |
| 15 | Hệ thống điều khiển | Custom-developed Tongcheng T33 system |
| 16 | Kích thước (Dài × Rộng × Cao) (mm) | 3200×1500×1500 |
| 17 | Trọng lượng tổng kg | 3200 |

Temperature is easy to treat as a secondary variable in SiC wafer cutting. A machine may report stable wire speed, the coolant tank may remain

A diamond wire can continue moving long after it has stopped cutting economically. It may not be broken, alarms may remain clear, and the machine

Build a SiC wafer metrology control plan after diamond wire saw cutting, covering TTV, flatness, bow, warp, edge chips and subsurface damage.

See how 800 VDC AI data center power architectures change SiC wafer cutting, kerf control, surface damage limits and supplier qualification.

Build a practical SiC slicing cost model using kerf loss, yield, wire life, cycle time, finishing allowance and diamond wire saw data.

Learn how 200 mm SiC wafer slicing changes contact length, wire bow, coolant delivery, TTV control and diamond wire saw qualification.
ewirexon.com
Thường trả lời trong vòng vài phút
Xin chào, có thể giúp gì cho bạn không?
Liên hệ với chúng tôi qua WhatsApp
🟢Trực tuyến | Chính sách bảo mật
Hãy nhắn tin cho chúng tôi qua WhatsApp