
Sawing Temperature in SiC Wafer Cutting: A Diamond Wire Saw Control Guide
Temperature is easy to treat as a secondary variable in SiC wafer cutting. A machine may report stable wire speed, the coolant tank may remain
Precision Cutting for New Energy Battery Materials
Advanced new energy batteries rely on precision processing of electrode, separator, and solid-state battery materials. Diamond wire cutting is the ideal solution for slicing hard, brittle, and high-value battery materials, delivering ultra-low kerf loss, damage-free surfaces, and tight dimensional accuracy.
Our cutting systems support customized processing for lithium-ion, solid-state, and next-gen energy storage materials, enabling high-precision slicing for R&D prototyping and mass production, while maximizing material utilization and production efficiency.
Our precision cutting systems are designed for the complex processing needs of new energy battery materials, supporting lithium-ion, solid-state, and next-generation energy storage technologies. They deliver damage-free, high-precision slicing for hard, brittle, and high-value battery materials, including electrode foils, ceramic separators, and solid-state electrolyte components. With customizable cutting paths and tension control, they meet the diverse R&D and mass production requirements of battery manufacturers.
| NO. | パラメータ | 仕様 |
| 1 | モデル | TCQF400LNC-FM-HL |
| 2 | 切断の原理 | エンドレス・ダイヤモンドワイヤー/物理的切断 |
| 3 | 切断機能 | スライス加工/角度・形状切断 |
| 4 | 最大ワークサイズ(mm) | Φ600mm、高さ500mm |
| 5 | 作業台のサイズ(mm) | Ø380 转台 |
| 6 | 切断平面度精度(mm) | 0.08 |
| 7 | 表面粗さ(μm) | Ra 0.8μm |
| 8 | ワイヤの仕様(mm) | Ø0.65–1.0/2580 |
| 9 | テンションシステム | ワイヤ張力の恒常制御 |
| 10 | ガイドホイールの数量 | 4輪 |
| 11 | 駆動モーター | サーボモーター |
| 12 | ワイヤ速度(m/s) | 51Max(調整可能) |
| 13 | 総出力(kW) | 2.8 |
| 14 | 電圧 | 220V 50Hz |
| 15 | 制御システム | 特注開発のTongcheng T32システム |
| 16 | 外形寸法(長さ×幅×高さ)(mm) | 1350×1066×1968 |
| 17 | 総重量(kg) | 720 |

Temperature is easy to treat as a secondary variable in SiC wafer cutting. A machine may report stable wire speed, the coolant tank may remain

A diamond wire can continue moving long after it has stopped cutting economically. It may not be broken, alarms may remain clear, and the machine

Build a SiC wafer metrology control plan after diamond wire saw cutting, covering TTV, flatness, bow, warp, edge chips and subsurface damage.

See how 800 VDC AI data center power architectures change SiC wafer cutting, kerf control, surface damage limits and supplier qualification.

Build a practical SiC slicing cost model using kerf loss, yield, wire life, cycle time, finishing allowance and diamond wire saw data.

Learn how 200 mm SiC wafer slicing changes contact length, wire bow, coolant delivery, TTV control and diamond wire saw qualification.
ewirexon.com
通常、数分以内に返信があります
こんにちは。何かお手伝いできることはありますか?
WhatsAppでメッセージを送る
🟢オンライン | プライバシーポリシー
WhatsAppでメッセージを送ってください