High-precision Diamond Wire Cutting Systems for Substrate Slicing
SiC ingots, compound semiconductor substrates and wide-bandgap materials experience significant mechanical stress and thermal impact during high-speed slicing. To ensure excellent surface quality, minimal sub-surface damage and avoid chipping or micro-cracks that lead to device failure, semiconductor manufacturers require highly stable cutting processes and precise process control. This is the only way to achieve reliable, high-yield production of high-quality wafers.
Processing SiC and compound semiconductors involves extremely high material and production costs. Around 30% of total substrate manufacturing cost comes from inefficient cutting, material loss and low yield, rather than raw materials alone. Choosing the right diamond wire cutting systems for specific applications can therefore greatly reduce production costs and improve efficiency.
High-precision diamond wire saws are used to slice hard, brittle ingots into thin wafers with stable tension and feed control. Their operating parameters are optimized for a stable process window with consistent wire tension, low vibration and narrow kerf width.
The new SiC & Compound Semiconductor diamond wire cutting systems from ewirexon are specially developed for high-precision slicing of SiC ingots and wide-bandgap substrates, where ultra-high wafer yield and minimal surface damage are required. The new SiC Series achieves significantly higher material yield than competitor products in this application area. The use of our cutting systems enables savings in production costs for semiconductor fabs. Another positive side effect is the reduction of material waste and surface damage.
| NO. | パラメータ | 仕様 |
| 1 | モデル | TCQF400LNC-FM-HL |
| 2 | 切断の原理 | エンドレス・ダイヤモンドワイヤー／物理的切断 |
| 3 | 切断機能 | スライス加工／角度・形状切断 |
| 4 | 最大ワークサイズ（mm） | Φ600mm、高さ500mm |
| 5 | 作業台のサイズ（mm） | Ø380 转台 |
| 6 | 切断平面度精度（mm） | 0.08 |
| 7 | 表面粗さ（μm） | Ra 0.8μm |
| 8 | ワイヤの仕様（mm） | Ø0.65–1.0/2580 |
| 9 | テンションシステム | ワイヤ張力の恒常制御 |
| 10 | ガイドホイールの数量 | 4輪 |
| 11 | 駆動モーター | サーボモーター |
| 12 | ワイヤ速度（m/s） | 51Max（調整可能） |
| 13 | 総出力（kW） | 2.8 |
| 14 | 電圧 | 220V 50Hz |
| 15 | 制御システム | 特注開発のTongcheng T32システム |
| 16 | 外形寸法（長さ×幅×高さ）（mm） | 1350×1066×1968 |
| 17 | 総重量（kg） | 720 |
This case study shows how the optimal selection of ewirexon diamond wire cutting systems can help boost wafer yield for SiC & compound semiconductor processing by up to 15% and thus sustainably lower the production costs of power semiconductor fabs. In addition, ewirexon’s SiC slicing solution delivers minimal surface damage, reduced material waste and higher production throughput compared to conventional cutting methods.
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Temperature is easy to treat as a secondary variable in SiC wafer cutting. A machine may report stable wire speed, the coolant tank may remain
A diamond wire can continue moving long after it has stopped cutting economically. It may not be broken, alarms may remain clear, and the machine
Build a SiC wafer metrology control plan after diamond wire saw cutting, covering TTV, flatness, bow, warp, edge chips and subsurface damage.
See how 800 VDC AI data center power architectures change SiC wafer cutting, kerf control, surface damage limits and supplier qualification.
Build a practical SiC slicing cost model using kerf loss, yield, wire life, cycle time, finishing allowance and diamond wire saw data.
Learn how 200 mm SiC wafer slicing changes contact length, wire bow, coolant delivery, TTV control and diamond wire saw qualification.
