
Sawing Temperature in SiC Wafer Cutting: A Diamond Wire Saw Control Guide
Temperature is easy to treat as a secondary variable in SiC wafer cutting. A machine may report stable wire speed, the coolant tank may remain
High-Precision Cutting Systems for Sapphire Wafer & Substrate Manufacturing
To maintain the quality and performance of optical and electronic components such as LED chips, photonic devices, and RF modules, and to reduce production yield loss, sapphire substrate fine cutting and precision processing equipment is used.
To maximize production throughput in high-volume manufacturing and keep operating costs as low as possible, cutting equipment should be designed to be highly precise and efficient. Optimal matching of the diamond wire, tension control system and cutting machine is a prerequisite for low-stress and high-yield sapphire processing. A highly efficient cutting system can make a decisive contribution to reducing processing time by providing ultra-narrow kerf loss at high process stability. Depending on the wafer thickness and material properties of the sapphire, the required cutting precision of a substrate processing line varies, and with it the wire tension control and cutting speed to be delivered by the diamond wire saw.
In addition to a high precision in the operating range of the production line, the cutting system used should be as space-saving as possible and have a robust design in order to keep the installation and maintenance effort low. The latter applies in particular to automated processing lines used in high-volume fabs. If the cutting system is used in cleanroom environments, the high reliability and low contamination requirements of the diamond wire cutting equipment used must also be taken into account.
The Sapphire Substrate Cutting Systems are a series specially developed for ultra-precision sapphire wafer slicing and fine cutting. The maximum shaft power of the cutting system is matched to the rated motor power and speed of common standard production lines. Thanks to an efficient diamond wire-guide combination, a very high cutting performance is achieved. The design of the Sapphire Cutting System with optimized wire path geometry enables ultra-narrow kerf loss and low-stress processing.
enabled by special high-precision wire tension control that provides consistent cutting accuracy.
without additional contamination risks, as optimized system design ensures minimal particle generation.
thanks to cutting system engineered for optimum material yield and maximum utilization of sapphire blanks.
as robust high-rigidity frame design generates less mechanical wear and requires less frequent maintenance.
| SỐ. | Tham số | Thông số kỹ thuật |
| 1 | Mẫu | TCQF400LNC-FM-HL |
| 2 | Nguyên lý cắt | Dây kim cương vô tận / Cắt cơ học |
| 3 | Các chức năng cắt | Cắt lát / Cắt theo góc và hình dạng |
| 4 | Kích thước tối đa của phôi (mm) | Đường kính Φ600mm, Chiều cao 500mm |
| 5 | Kích thước bàn làm việc (mm) | Ø380 转台 |
| 6 | Độ chính xác về độ phẳng khi cắt (mm) | 0.08 |
| 7 | Độ nhám bề mặt (μm) | Ra 0,8 μm |
| 8 | Thông số kỹ thuật dây (mm) | Ø0,65–1,0/2580 |
| 9 | Hệ thống căng dây | Kiểm soát độ căng dây không đổi |
| 10 | Số lượng bánh dẫn hướng | 4 bánh xe |
| 11 | Động cơ truyền động | Động cơ servo |
| 12 | Tốc độ dây (m/s) | 51Max (Có thể điều chỉnh) |
| 13 | Total Power | 2.8 |
| 14 | Điện áp | 220 V, 50 Hz |
| 15 | Hệ thống điều khiển | Hệ thống Tongcheng T32 được phát triển theo yêu cầu |
| 16 | Kích thước (Dài × Rộng × Cao) (mm) | 1350×1066×1968 |
| 17 | Trọng lượng tổng kg | 720 |

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