SiC & Compound Semiconductor Processing


High-precision Diamond Wire Cutting Systems for Substrate Slicing

SiC ingots, compound semiconductor substrates and wide-bandgap materials experience significant mechanical stress and thermal impact during high-speed slicing. To ensure excellent surface quality, minimal sub-surface damage and avoid chipping or micro-cracks that lead to device failure, semiconductor manufacturers require highly stable cutting processes and precise process control. This is the only way to achieve reliable, high-yield production of high-quality wafers.

Processing SiC and compound semiconductors involves extremely high material and production costs. Around 30% of total substrate manufacturing cost comes from inefficient cutting, material loss and low yield, rather than raw materials alone. Choosing the right diamond wire cutting systems for specific applications can therefore greatly reduce production costs and improve efficiency.

High-precision diamond wire saws are used to slice hard, brittle ingots into thin wafers with stable tension and feed control. Their operating parameters are optimized for a stable process window with consistent wire tension, low vibration and narrow kerf width.

SiC & Compound Semiconductor Processing

ewirexon SiC & Compound Semiconductor Diamond Wire Cutting System

The new SiC & Compound Semiconductor diamond wire cutting systems from ewirexon are specially developed for high-precision slicing of SiC ingots and wide-bandgap substrates, where ultra-high wafer yield and minimal surface damage are required. The new SiC Series achieves significantly higher material yield than competitor products in this application area. The use of our cutting systems enables savings in production costs for semiconductor fabs. Another positive side effect is the reduction of material waste and surface damage.

  • Potential savings in production costs through higher material yield of the cutting systems in typical SiC processing lines
  • Optimum use of resources
  • Material cost savings in production due to minimal kerf loss and sub-surface damage
  • Flexible and compact equipment design possible due to modular structure and small footprint
  • Easier handling during installation and maintenance thanks to user-friendly operation and remote monitoring
  • Reduction of maintenance costs through longer service life of the diamond wire and machine components
  • Economical turnkey system solutions thanks to customized process parameters and full system integration
  • SiC & Compound Semiconductor Processing
  • Power Semiconductor Wafer Manufacturing
  • Ingot Slicing & Substrate Processing
  • Wide-Bandgap Material Cutting
  • R&D Labs & Pilot Production Lines
  • Advanced Packaging Facilities
NO.ParameterSpecification
1ModelTCQF400LNC-FM-HL
2Cutting PrincipleEndless diamond wire / Physical cutting
3Cutting FunctionsSlicing / Angle & Profile Cutting
4Maximum Workpiece Size(mm)Φ600mm, Height 500mm
5Worktable Size(mm)Ø380 转台
6Cutting Planarity Accuracy(mm)0.08
7Surface Roughness(μm)Ra 0.8μm
8Wire Specification(mm)Ø0.65–1.0/2580
9Tension SystemConstant Wire Tension Control
10Guide Wheel Quantity4 wheels
11Drive MotorServo motor
12Wire Speed (m/s)51Max(Adjustable)
13Total Power(kW)2.8
14Voltage220v 50Hz
15Control SystemCustom-developed Tongcheng T32 system
16Footprint (L×W×H)(mm)1350×1066×1968
17Gross Weight kg720

Case Study: SiC & Compound Semiconductor Processing

This case study shows how the optimal selection of ewirexon diamond wire cutting systems can help boost wafer yield for SiC & compound semiconductor processing by up to 15% and thus sustainably lower the production costs of power semiconductor fabs. In addition, ewirexon’s SiC slicing solution delivers minimal surface damage, reduced material waste and higher production throughput compared to conventional cutting methods.

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