
Sawing Temperature in SiC Wafer Cutting: A Diamond Wire Saw Control Guide
Temperature is easy to treat as a secondary variable in SiC wafer cutting. A machine may report stable wire speed, the coolant tank may remain
用于电子陶瓷基板制造和切割的金刚石线切割系统
电子陶瓷基板广泛应用于半导体和电子制造工艺中。如果没有足够精确的切割,基板加工过程中产生的尺寸误差和材料损坏会导致设备性能降低、产量损失增加以及最终产品失效。为了确保多层陶瓷元件、电源模块和电子封装在任何时候都能发挥最佳功能,并最大限度地减少生产停机时间,必须确保可靠的高精度基片加工。.
除了要有超严格的尺寸精度以满足封装要求外,所使用的金刚石线切割系统还应满足其他要求。其中,必须符合半导体行业的质量标准,这意味着切割系统必须具有极低的切口损耗和最小的次表面损伤。此外,对工艺稳定性的要求也很高,例如在大批量生产线上使用时,因此系统的设计必须保证切割性能的一致性和可重复性。此外,当集成到工厂空间有限的自动化基板生产线时,紧凑的占地面积也非常重要。.
With the Electronic Ceramic Substrate Processing Line, ewirexon supplies some of the world’s most high-precision and at the same time most cost-effective diamond wire cutting systems for electronic ceramic substrate manufacturing. Specially developed for slicing alumina, aluminum nitride (AlN) and multi-layer ceramic substrates, the cutting systems deliver ultra-tight dimensional accuracy with a very compact and robust design. Thus, the systems enable a space-saving production line design even at high throughput and variable processing parameters. Thanks to the low kerf loss of the cutting systems, material yield can be maximized depending on the substrate type.
| 不. | 参数 | 规格 |
| 1 | 模型 | TCQF400LNC-FM-HL |
| 2 | 切割原理 | 无尽金刚石线/物理切割 |
| 3 | 切割功能 | 切片 / 角材和型材切割 |
| 4 | 最大工件尺寸(毫米) | Φ600毫米,高度500毫米 |
| 5 | 工作台尺寸(毫米) | Ø380 转台 |
| 6 | 切割平面精度(毫米) | 0.08 |
| 7 | 表面粗糙度(μm) | Ra 0.8μm |
| 8 | 电线规格(毫米) | Ø0.65-1.0/2580 |
| 9 | 张力系统 | 恒线张力控制 |
| 10 | 导轮数量 | 4 轮 |
| 11 | 驱动电机 | 伺服电机 |
| 12 | 线速(米/秒) | 51Max(可调) |
| 13 | 总功率(千瓦) | 2.8 |
| 14 | 电压 | 220 伏 50 赫兹 |
| 15 | 控制系统 | 定制开发的通程 T32 系统 |
| 16 | 占地面积(长×宽×高)(毫米) | 1350×1066×1968 |
| 17 | 毛重 千克 | 720 |

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