High-precision Diamond Wire Cutting Systems for Substrate Slicing
SiC ingots, compound semiconductor substrates and wide-bandgap materials experience significant mechanical stress and thermal impact during high-speed slicing. To ensure excellent surface quality, minimal sub-surface damage and avoid chipping or micro-cracks that lead to device failure, semiconductor manufacturers require highly stable cutting processes and precise process control. This is the only way to achieve reliable, high-yield production of high-quality wafers.
Processing SiC and compound semiconductors involves extremely high material and production costs. Around 30% of total substrate manufacturing cost comes from inefficient cutting, material loss and low yield, rather than raw materials alone. Choosing the right diamond wire cutting systems for specific applications can therefore greatly reduce production costs and improve efficiency.
High-precision diamond wire saws are used to slice hard, brittle ingots into thin wafers with stable tension and feed control. Their operating parameters are optimized for a stable process window with consistent wire tension, low vibration and narrow kerf width.
The new SiC & Compound Semiconductor diamond wire cutting systems from ewirexon are specially developed for high-precision slicing of SiC ingots and wide-bandgap substrates, where ultra-high wafer yield and minimal surface damage are required. The new SiC Series achieves significantly higher material yield than competitor products in this application area. The use of our cutting systems enables savings in production costs for semiconductor fabs. Another positive side effect is the reduction of material waste and surface damage.
| नहीं।. | पैरामीटर | विनिर्देश |
| 1 | मॉडल | टीसीक्यूएफ400एलएनसी-एफएम-एचएल |
| 2 | काटन का सिद्धांत | अनंत हीरे की तार / भौतिक काटना |
| 3 | काटने के कार्य | स्लाइसिंग / कोण और प्रोफ़ाइल कटिंग |
| 4 | अधिकतम वर्कपीस आकार (मिमी) | Φ600 मिमी, ऊँचाई 500 मिमी |
| 5 | कार्य-टेबल का आकार (मिमी) | Ø380 转台 |
| 6 | कटिंग समतलता सटीकता (मिमी) | 0.08 |
| 7 | सतही खुरदरापन (माइक्रोमीटर) | रे 0.8 माइक्रोमीटर |
| 8 | तार विनिर्देश (मिमी) | Ø0.65–1.0/2580 |
| 9 | तनाव प्रणाली | सतत तार तनाव नियंत्रण |
| 10 | गाइड व्हील की मात्रा | चार पहिये |
| 11 | चालक मोटर | सर्भो मोटर |
| 12 | तार की गति (मी/से) | 51मैक्स (समायोज्य) |
| 13 | कुल शक्ति (किलोवाट) | 2.8 |
| 14 | वोल्टेज | 220v 50Hz |
| 15 | नियंत्रण प्रणाली | विशेष रूप से विकसित टोंगचेंग टी32 प्रणाली |
| 16 | फुटप्रिंट (लंबाई×चौड़ाई×ऊंचाई)(मिमी) | १३५०×१०६६×१९६८ |
| 17 | कुल वजन किग्रा | 720 |
This case study shows how the optimal selection of ewirexon diamond wire cutting systems can help boost wafer yield for SiC & compound semiconductor processing by up to 15% and thus sustainably lower the production costs of power semiconductor fabs. In addition, ewirexon’s SiC slicing solution delivers minimal surface damage, reduced material waste and higher production throughput compared to conventional cutting methods.
क्या आप और प्रोजेक्ट केस जानना चाहते हैं? बेझिझक हमें लिखें!
Temperature is easy to treat as a secondary variable in SiC wafer cutting. A machine may report stable wire speed, the coolant tank may remain
A diamond wire can continue moving long after it has stopped cutting economically. It may not be broken, alarms may remain clear, and the machine
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