Diamond Wire Cutting Systems for Electronic Ceramic Substrate Manufacturing & Dicing
Electronic ceramic substrates are used in a wide variety of semiconductor and electronic manufacturing processes. Without sufficient precision cutting, the dimensional errors and material damage generated during substrate processing can lead to reduced device performance, increased yield loss and consequential failure of the end product. To ensure optimum functionality of multi-layer ceramic components, power modules and electronic packages at all times and to minimize production downtime, reliable, high-precision substrate processing must be ensured.
In addition to ultra-tight dimensional accuracy to meet the packaging requirements, the diamond wire cutting systems used should meet other requirements. Among other things, semiconductor industry quality standards must be complied with, which means that the cutting systems must have very low kerf loss and minimal sub-surface damage. Furthermore, there are high requirements for process stability, for example when used in high-volume production lines, so the systems must be designed so that there is consistent, repeatable cutting performance. In addition, a compact footprint is of great importance when integrated into automated substrate manufacturing lines with limited factory space.
With the Electronic Ceramic Substrate Processing Line, ewirexon supplies some of the world’s most high-precision and at the same time most cost-effective diamond wire cutting systems for electronic ceramic substrate manufacturing. Specially developed for slicing alumina, aluminum nitride (AlN) and multi-layer ceramic substrates, the cutting systems deliver ultra-tight dimensional accuracy with a very compact and robust design. Thus, the systems enable a space-saving production line design even at high throughput and variable processing parameters. Thanks to the low kerf loss of the cutting systems, material yield can be maximized depending on the substrate type.
| 아니요. | 매개변수 | 사양 |
| 1 | 모델 | TCQF400LNC-FM-HL |
| 2 | 절단 원리 | 무한 다이아몬드 와이어 / 물리적 절단 |
| 3 | 절단 기능 | 슬라이싱 / 각도 및 단면 절단 |
| 4 | 최대 공작물 크기(mm) | Φ600mm, 높이 500mm |
| 5 | 작업대 크기(mm) | Ø380 转台 |
| 6 | 절단 평탄도 정밀도(mm) | 0.08 |
| 7 | 표면 거칠기(μm) | Ra 0.8μm |
| 8 | 와이어 사양(mm) | Ø0.65–1.0/2580 |
| 9 | 장력 시스템 | 일정한 와이어 장력 제어 |
| 10 | 가이드 휠 수량 | 4륜 |
| 11 | 구동 모터 | 서보 모터 |
| 12 | 와이어 속도 (m/s) | 51Max（조절 가능） |
| 13 | 총 출력(kW) | 2.8 |
| 14 | 전압 | 220V 50Hz |
| 15 | 제어 시스템 | 맞춤 개발된 통청 T32 시스템 |
| 16 | 치수 (길이×폭×높이)(mm) | 1350×1066×1968 |
| 17 | 총 중량 (kg) | 720 |
Temperature is easy to treat as a secondary variable in SiC wafer cutting. A machine may report stable wire speed, the coolant tank may remain
A diamond wire can continue moving long after it has stopped cutting economically. It may not be broken, alarms may remain clear, and the machine
Build a SiC wafer metrology control plan after diamond wire saw cutting, covering TTV, flatness, bow, warp, edge chips and subsurface damage.
See how 800 VDC AI data center power architectures change SiC wafer cutting, kerf control, surface damage limits and supplier qualification.
Build a practical SiC slicing cost model using kerf loss, yield, wire life, cycle time, finishing allowance and diamond wire saw data.
Learn how 200 mm SiC wafer slicing changes contact length, wire bow, coolant delivery, TTV control and diamond wire saw qualification.
