
Sawing Temperature in SiC Wafer Cutting: A Diamond Wire Saw Control Guide
Temperature is easy to treat as a secondary variable in SiC wafer cutting. A machine may report stable wire speed, the coolant tank may remain
Advanced Processing Systems for New-type Functional Material Manufacturing
New-type functional materials (composites, 2D materials, energy storage materials) drive cutting-edge industries like new energy and semiconductors. Precision processing unlocks their unique properties, directly determining device performance. Diamond wire cutting is the key technology, offering ultra-low damage and wide compatibility.
In R&D and production, diamond wire systems perform ultra-fine slicing, ensuring minimal subsurface damage and micron-level accuracy. Flexible configurations support both lab prototyping and mass production, adapting to evolving material needs.
Our systems deliver ultra-low damage cutting to protect material performance, high precision for micro-components, and wide material compatibility, supporting next-generation new energy and semiconductor technologies.
Our diamond wire cutting systems support high-efficiency, high-precision processing of a wide range of new-type functional materials, including composite materials, biomaterials, 2D materials, energy storage materials, and special structural materials. With ultra-fine cutting capability and low-damage processing characteristics, they meet the strict requirements of R&D prototypes and small-batch trial production as well as large-scale mass production.
| N.º. | Parámetro | Especificaciones |
| 1 | Modelo | (Personalizable, p. ej., EW-200) |
| 2 | Principio de corte | Corte en frío mecánico con alambre de diamante |
| 3 | Función de corte | Cortar en rodajas |
| 4 | Dimensiones máximas de la pieza de trabajo (L × W × H) | 150 × 150 × 150 mm |
| 5 | Dimensiones de la mesa de trabajo (largo × ancho) | 160 × 160 mm |
| 6 | Precisión en la planitud del corte | ≤ 0,1 mm |
| 7 | Rugosidad superficial | Ra 0,8 μm |
| 8 | Especificaciones del alambre de diamante | Φ0,5 × 1797 mm (rango de diámetro: 0,35~0,8 mm) |
| 9 | Sistema de tensión | Control de tensión por servo |
| 10 | Cantidad de ruedas guía | 3 ruedas |
| 11 | Motor de accionamiento | Servomotor a medida |
| 12 | Velocidad del husillo | 4500 rpm |
| 13 | Potencia del motor principal | 1,1 kW |
| 14 | Consumo total de energía | 1,5 kW |
| 15 | Fuente de alimentación | 220 V / 50 Hz |
| 16 | Sistema de control | Tongcheng T30, de desarrollo propio |
| 17 | Dimensiones (L × W × H) | Aprox. 850 × 800 × 950 mm |
| 18 | Peso bruto | Aprox. 560 kg |

Temperature is easy to treat as a secondary variable in SiC wafer cutting. A machine may report stable wire speed, the coolant tank may remain

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