High-precision Diamond Wire Cutting Systems for Substrate Slicing
SiC ingots, compound semiconductor substrates and wide-bandgap materials experience significant mechanical stress and thermal impact during high-speed slicing. To ensure excellent surface quality, minimal sub-surface damage and avoid chipping or micro-cracks that lead to device failure, semiconductor manufacturers require highly stable cutting processes and precise process control. This is the only way to achieve reliable, high-yield production of high-quality wafers.
Processing SiC and compound semiconductors involves extremely high material and production costs. Around 30% of total substrate manufacturing cost comes from inefficient cutting, material loss and low yield, rather than raw materials alone. Choosing the right diamond wire cutting systems for specific applications can therefore greatly reduce production costs and improve efficiency.
High-precision diamond wire saws are used to slice hard, brittle ingots into thin wafers with stable tension and feed control. Their operating parameters are optimized for a stable process window with consistent wire tension, low vibration and narrow kerf width.
The new SiC & Compound Semiconductor diamond wire cutting systems from ewirexon are specially developed for high-precision slicing of SiC ingots and wide-bandgap substrates, where ultra-high wafer yield and minimal surface damage are required. The new SiC Series achieves significantly higher material yield than competitor products in this application area. The use of our cutting systems enables savings in production costs for semiconductor fabs. Another positive side effect is the reduction of material waste and surface damage.
| НЕТ. | Параметр | Технические характеристики |
| 1 | Модель | TCQF400LNC-FM-HL |
| 2 | Принцип резки | Бесконечная алмазная леска / Механическая резка |
| 3 | Функции резки | Нарезка / Резка под углом и по профилю |
| 4 | Максимальный размер заготовки (мм) | Φ600 мм, высота 500 мм |
| 5 | Размер рабочего стола (мм) | Ø380 转台 |
| 6 | Точность плоскостности реза (мм) | 0.08 |
| 7 | Шероховатость поверхности (мкм) | Ra 0,8 мкм |
| 8 | Характеристики проволоки (мм) | Ø0,65–1,0/2580 |
| 9 | Система натяжения | Контроль постоянного натяжения проволоки |
| 10 | Количество направляющих колес | 4 колеса |
| 11 | Приводной двигатель | Сервомотор |
| 12 | Скорость движения проволоки (м/с) | 51Max (регулируемый) |
| 13 | Общая мощность (кВт) | 2.8 |
| 14 | Напряжение | 220 В, 50 Гц |
| 15 | Система управления | Специально разработанная система Tongcheng T32 |
| 16 | Габаритные размеры (Д × Ш × В) (мм) | 1350×1066×1968 |
| 17 | Брутто-вес, кг | 720 |
This case study shows how the optimal selection of ewirexon diamond wire cutting systems can help boost wafer yield for SiC & compound semiconductor processing by up to 15% and thus sustainably lower the production costs of power semiconductor fabs. In addition, ewirexon’s SiC slicing solution delivers minimal surface damage, reduced material waste and higher production throughput compared to conventional cutting methods.
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