Precision Diamond Wire Cutting Solutions for PV Manufacturing
Monocrystalline and polycrystalline silicon ingots are the foundational raw materials for high-efficiency photovoltaic solar cells. Precision slicing into ultra-thin wafers is a critical process that directly determines material utilization, wafer quality, and solar module conversion efficiency. Diamond wire cutting has become the global industry standard, delivering far higher efficiency, lower kerf loss, and superior surface quality than traditional slurry sawing.
In modern PV production lines, diamond wire saws perform multi-wire reciprocating cutting to slice ingots into hundreds of wafers in a single pass. The process demands extreme precision in wire tension, cutting speed, and cooling to ensure consistent thickness, minimal breakage, and low surface damage—key requirements for high-performance N-type and P-type solar cells.
Our diamond wire cutting systems deliver ultra-low kerf loss to maximize material yield, high throughput to reduce production costs, and stable operation for large-size ingots (up to G12+), meeting the evolving demands of the global solar industry.
| НЕТ. | Параметр | Технические характеристики |
| 1 | Модель | TCQF15030CNC |
| 2 | Принцип резки | Бесконечная алмазная леска / Механическая резка |
| 3 | Функции резки | Резка / 2D-контурная резка |
| 4 | Максимальный размер заготовки (мм) | 1200 × 1000 × 1000 мм (Д × Ш × В) |
| 5 | Размер рабочего стола (мм) | 1500×300 |
| 6 | Точность плоскостности реза (мм) | 0.1 |
| 7 | Шероховатость поверхности (мкм) | Ra 0,8 мкм |
| 8 | Характеристики проволоки (мм) | Ø0,65–1,0/6250 |
| 9 | Система натяжения | Контроль постоянного натяжения проволоки |
| 10 | Количество направляющих колес | 4 колеса |
| 11 | Приводной двигатель | Сервомотор |
| 12 | Скорость движения проволоки (м/с) | 51Max (регулируемый) |
| 13 | Общая мощность (кВт) | 3.6 |
| 14 | Напряжение | 220 В, 50 Гц |
| 15 | Система управления | Разработанная по индивидуальному заказу система Tongcheng T33 |
| 16 | Габаритные размеры (Д × Ш × В) (мм) | 3200×1500×1500 |
| 17 | Брутто-вес, кг | 3200 |
Temperature is easy to treat as a secondary variable in SiC wafer cutting. A machine may report stable wire speed, the coolant tank may remain
A diamond wire can continue moving long after it has stopped cutting economically. It may not be broken, alarms may remain clear, and the machine
Build a SiC wafer metrology control plan after diamond wire saw cutting, covering TTV, flatness, bow, warp, edge chips and subsurface damage.
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Build a practical SiC slicing cost model using kerf loss, yield, wire life, cycle time, finishing allowance and diamond wire saw data.
Learn how 200 mm SiC wafer slicing changes contact length, wire bow, coolant delivery, TTV control and diamond wire saw qualification.
