
Sawing Temperature in SiC Wafer Cutting: A Diamond Wire Saw Control Guide
Temperature is easy to treat as a secondary variable in SiC wafer cutting. A machine may report stable wire speed, the coolant tank may remain
Low-Stress Cutting Systems for Hard & Brittle Electronic Materials
Brittle electronic plates, including ceramic substrates, semiconductor wafers, and glass-ceramic components, present unique machining challenges due to their high hardness and low fracture toughness. Precision machining is required to achieve tight dimensional tolerances while avoiding surface damage and cracking.
Our diamond wire cutting systems excel at ultra-precise machining of hard brittle materials, achieving micron-level accuracy and minimal surface damage. The advanced cutting technology controls subsurface damage effectively, making it ideal for microelectronic components, power devices, and sensor manufacturing.
Engineered for the most demanding semiconductor and electronics applications, our systems feature high-rigidity frames and intelligent process control. They deliver stable, repeatable performance for R&D prototypes and high-volume production lines alike, meeting the strict quality standards of the 5G, aerospace, and medical electronics industries.
Our diamond wire cutting systems are engineered for the complex processing of hard, brittle electronic plates, including ceramic substrates, semiconductor wafers, and glass-ceramic components. The advanced cutting technology achieves ultra-fine slicing with minimal surface damage, making it ideal for microelectronic components, power devices, and sensor manufacturing. With customizable cutting paths and high-rigidity machine frames, it delivers consistent accuracy for even the most challenging brittle materials.
| 아니요. | 매개변수 | 사양 |
| 1 | 모델 | TCQF400LNC-FM-HL |
| 2 | 절단 원리 | 무한 다이아몬드 와이어 / 물리적 절단 |
| 3 | 절단 기능 | 슬라이싱 / 각도 및 단면 절단 |
| 4 | 최대 공작물 크기(mm) | Φ600mm, 높이 500mm |
| 5 | 작업대 크기(mm) | Ø380 转台 |
| 6 | 절단 평탄도 정밀도(mm) | 0.08 |
| 7 | 표면 거칠기(μm) | Ra 0.8μm |
| 8 | 와이어 사양(mm) | Ø0.65–1.0/2580 |
| 9 | 장력 시스템 | 일정한 와이어 장력 제어 |
| 10 | 가이드 휠 수량 | 4륜 |
| 11 | 구동 모터 | 서보 모터 |
| 12 | 와이어 속도 (m/s) | 51Max(조절 가능) |
| 13 | 총 출력(kW) | 2.8 |
| 14 | 전압 | 220V 50Hz |
| 15 | 제어 시스템 | 맞춤 개발된 통청 T32 시스템 |
| 16 | 치수 (길이×폭×높이)(mm) | 1350×1066×1968 |
| 17 | 총 중량 (kg) | 720 |

Temperature is easy to treat as a secondary variable in SiC wafer cutting. A machine may report stable wire speed, the coolant tank may remain

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