Diamond Wire Cutting Systems for Package Substrate Slicing & Precision Component Cutting
Chip carrier and package material precision cutting systems can make the difference between yield and scrap in high-volume semiconductor packaging. They provide a reliable processing solution by cutting brittle, multi-layer packaging substrates and lead frames with ultra-high accuracy. Especially for packaging manufacturers, many factors have to be kept in mind in order to be able to guarantee the dimensional accuracy and structural integrity of the components.
In order to process multi-layer packaging materials with complex structures and high hardness, a stable cutting process must be achieved with minimal kerf loss and sub-surface damage. To ensure that the increasing precision requirements of advanced packaging do not lead to component defects or yield loss, the performance of the cutting systems used must be guaranteed at all times. In order to be able to guarantee this performance, diamond wire cutting systems must be tested in accordance with semiconductor industry standards at accredited testing laboratories.
Industry-standard certified cutting systems are subject to defined guidelines with regard to process modifications. ewirexon uses a special production and process optimization process to help you ensure that the high qualitative requirements of advanced packaging are met.
ewirexon diamond wire cutting systems for package material processing are characterized by an optimum price/performance ratio and are particularly suitable for precision cutting of chip carriers, lead frames and multi-layer packaging substrates. The systems generate ultra-high cutting accuracy with minimal kerf loss in limited production space. With rigid machine frames that can meet the strict precision requirements of advanced packaging, ewirexon offers an efficient and reliable option for fabs that handle both R&D prototyping and high-volume production at the same time. Thanks to a wide range of performance and customized process parameters, manufacturers of semiconductor packaging can reduce their component diversity with ewirexon’s Package Material Cutting solution.
| НЕТ. | Параметр | Технические характеристики |
| 1 | Модель | TCQF400LNC-FM-HL |
| 2 | Принцип резки | Бесконечная алмазная леска / Механическая резка |
| 3 | Функции резки | Нарезка / Резка под углом и по профилю |
| 4 | Максимальный размер заготовки (мм) | Φ600 мм, высота 500 мм |
| 5 | Размер рабочего стола (мм) | Ø380 转台 |
| 6 | Точность плоскостности реза (мм) | 0.08 |
| 7 | Шероховатость поверхности (мкм) | Ra 0,8 мкм |
| 8 | Характеристики проволоки (мм) | Ø0,65–1,0/2580 |
| 9 | Система натяжения | Контроль постоянного натяжения проволоки |
| 10 | Количество направляющих колес | 4 колеса |
| 11 | Приводной двигатель | Сервомотор |
| 12 | Скорость движения проволоки (м/с) | 51Max (регулируемый) |
| 13 | Общая мощность (кВт) | 2.8 |
| 14 | Напряжение | 220 В, 50 Гц |
| 15 | Система управления | Специально разработанная система Tongcheng T32 |
| 16 | Габаритные размеры (Д × Ш × В) (мм) | 1350×1066×1968 |
| 17 | Брутто-вес, кг | 720 |
In the demanding semiconductor packaging industry, certified high-precision cutting solutions are indispensable. This case study looks at the complex challenge of developing a high-yield diamond wire cutting system that has to process ultra-thin, multi-layer packaging materials reliably with minimal kerf loss. How was our customer able to not only meet the strict precision requirements of advanced packaging, but even exceed them? What role did the strategic partnership with ewirexon play in this challenging project?
Хотите узнать больше о наших проектах? Не стесняйтесь, пишите нам!
Temperature is easy to treat as a secondary variable in SiC wafer cutting. A machine may report stable wire speed, the coolant tank may remain
A diamond wire can continue moving long after it has stopped cutting economically. It may not be broken, alarms may remain clear, and the machine
Build a SiC wafer metrology control plan after diamond wire saw cutting, covering TTV, flatness, bow, warp, edge chips and subsurface damage.
See how 800 VDC AI data center power architectures change SiC wafer cutting, kerf control, surface damage limits and supplier qualification.
Build a practical SiC slicing cost model using kerf loss, yield, wire life, cycle time, finishing allowance and diamond wire saw data.
Learn how 200 mm SiC wafer slicing changes contact length, wire bow, coolant delivery, TTV control and diamond wire saw qualification.
