
Sawing Temperature in SiC Wafer Cutting: A Diamond Wire Saw Control Guide
Temperature is easy to treat as a secondary variable in SiC wafer cutting. A machine may report stable wire speed, the coolant tank may remain
Advanced Processing Systems for New-type Functional Material Manufacturing
New-type functional materials (composites, 2D materials, energy storage materials) drive cutting-edge industries like new energy and semiconductors. Precision processing unlocks their unique properties, directly determining device performance. Diamond wire cutting is the key technology, offering ultra-low damage and wide compatibility.
In R&D and production, diamond wire systems perform ultra-fine slicing, ensuring minimal subsurface damage and micron-level accuracy. Flexible configurations support both lab prototyping and mass production, adapting to evolving material needs.
Our systems deliver ultra-low damage cutting to protect material performance, high precision for micro-components, and wide material compatibility, supporting next-generation new energy and semiconductor technologies.
Our diamond wire cutting systems support high-efficiency, high-precision processing of a wide range of new-type functional materials, including composite materials, biomaterials, 2D materials, energy storage materials, and special structural materials. With ultra-fine cutting capability and low-damage processing characteristics, they meet the strict requirements of R&D prototypes and small-batch trial production as well as large-scale mass production.
| 不. | 参数 | 规格 |
| 1 | 模型 | (可自定义,例如 EW-200) |
| 2 | 切割原理 | 金刚线机械冷切割 |
| 3 | 切割功能 | 切片 |
| 4 | 工件最大尺寸(长×宽×高) | 150 × 150 × 150 毫米 |
| 5 | 工作台尺寸(长×宽) | 160 × 160 毫米 |
| 6 | 切割平整度精度 | ≤ 0.1 毫米 |
| 7 | 表面粗糙度 | Ra 0.8 μm |
| 8 | 金刚石线规格 | Φ0.5 × 1797 毫米(直径范围:0.35~0.8 毫米) |
| 9 | 张力系统 | 伺服张力控制 |
| 10 | 导轮数量 | 3个轮子 |
| 11 | 驱动电机 | 定制伺服电机 |
| 12 | 主轴转速 | 4500 转/分 |
| 13 | 主电机功率 | 1.1 千瓦 |
| 14 | 总功耗 | 1.5 千瓦 |
| 15 | 电源 | 220 V / 50 Hz |
| 16 | 控制系统 | 自主研发的通城T30 |
| 17 | 占地面积(长×宽×高) | 约 850 × 800 × 950 毫米 |
| 18 | 毛重 | 约560千克 |

Temperature is easy to treat as a secondary variable in SiC wafer cutting. A machine may report stable wire speed, the coolant tank may remain

A diamond wire can continue moving long after it has stopped cutting economically. It may not be broken, alarms may remain clear, and the machine

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