Product & Technology Updates - Diamond Wire Saw & Precision Cutting Systems for Hard Brittle Materials

A transparent fused-silica block undergoing precision diamond wire cutting beside optical glass and quartz coupons

コパッケージド・オプティクス向けの光学ガラス切断：ダイヤモンドワイヤーソーの適応分野

2026年9月24日

Co-packaged optics is moving from architecture diagrams into manufacturing programs. In 2026, GlobalFoundries introduced its SCALE optical-module platform, Coherent demonstrated multiple CPO technologies at OFC, and Corning described fiber-to-chip connectivity as a system-level manufacturing challenge. These developments reflect the same pressure: AI clusters need more bandwidth without allowing electrical interconnect power and loss to grow unchecked. That trend creates work

A pale gray aluminum nitride block undergoing coolant-controlled diamond wire saw cutting beside finished AlN substrate plates

AlN基板の切断：ワイヤの振動が表面損傷に与える影響

2026年9月24日

Aluminum nitride is selected for applications where electrical insulation and heat removal must coexist: power-module substrates, RF components, LED packages, heat spreaders and emerging semiconductor structures. That value also makes cutting loss expensive. A plate that leaves the saw with hidden microcracks, orientation error or excess stock allowance may not fail until grinding, metallization, thermal cycling or assembly. A 2026

A sapphire boule undergoing coolant-controlled fixed-abrasive diamond wire saw cutting beside finished sapphire wafers

サファイアウェーハの切断：結晶の異方性がダイヤモンドワイヤーソーの切断結果に与える影響

2026年9月17日

A sapphire wafer can meet an average thickness target and still be expensive to finish. The problem may be a systematic shape deviation that follows crystal orientation rather than a random machine error. Because sapphire is anisotropic, its elastic and fracture response changes with crystallographic plane and cutting direction. The diamond wire can therefore experience an unequal lateral response even

A 300 mm silicon carbide boule and wafers in a coolant-controlled precision diamond wire saw development setup

300 mm SiCウェーハのスライシング：ダイヤモンドワイヤーソーの適格性評価ガイド

2026年9月17日

Three hundred millimeter silicon carbide is no longer only a conference-roadmap number. Coherent announced a 300 mm SiC platform milestone in December 2025, and Wolfspeed reported production of a single-crystal 300 mm SiC wafer in January 2026. These announcements do not mean that 300 mm SiC has already become a standard volume substrate. They do mean that process-development teams should

A 200 mm SiC boule undergoing coolant-controlled diamond multi-wire sawing with thermal monitoring

SiCウェハーの切断における切断温度：ダイヤモンドワイヤーソーの制御ガイド

2026年9月11日

Temperature is easy to treat as a secondary variable in SiC wafer cutting. A machine may report stable wire speed, the coolant tank may remain close to its setpoint, and the first wafers may look acceptable. Yet heat is being generated at thousands of short, intermittent contacts between diamond grains and silicon carbide. If that heat is not removed consistently,

A process engineer inspecting used diamond wire beside SiC wafers and a precision wire saw

半導体ウェハーの切断におけるダイヤモンドワイヤーソーの摩耗：ワイヤーの交換時期

2026年9月11日

A diamond wire can continue moving long after it has stopped cutting economically. It may not be broken, alarms may remain clear, and the machine may still complete every cycle. Meanwhile, feed force rises, cut time stretches, surface marks deepen and more downstream stock is needed to recover an acceptable wafer. Waiting for wire breakage makes replacement simple to define,